IMPACT OF SULFURIZATION ON SPUTTERED BIVO4 THIN FILMS
Shukur GofurovDilbar BozorovaIon-plasma and laser technologies Institute, Tashkent, UzbekistanKADIROVA ZuhraTashkent Institute of Chemical Technology, SE “Uzbekistan Japan Innovation Center of Youth”, Tashkent, UzbekistanOksana IsmailovaUzbekistan-Japan Innovation Center of Youth, Turin Polytechnic University in Tashkent, Uzbekistan
2024en
Ochiq kirish: yoʻq
ABI
Annotatsiya
The sulfurization method has been used to decrease the band gap of the BiVO4 structure, reduce the recombination of electrons and holes, and increase the photoelectrochemical performance of this material. It has been observed that incorporation of sulfur into stoichiometric and Vrich BiVO4 is variously affected changing of properties of the structure. Sulfurization can modify Vrich BiVO4 structure rather than stoichiometric BiVO4.
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