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43 ta ish

Ish: The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

  1. Electronic irradiation of TlInSxSe2−x (x = 1): Morphology, structure and raman scattering

    M. Yu. Tashmetov, F. K. Khallokov, N.B. Ismatov +2

    MaqolaSolid-state spectroscopy and crystallographyInternational Journal of Modern Physics B202115 iqtibos
    ABI

  2. Structure, morphology and properties of ZnS crystal irradiated by electrons of different fluences

    M. Yu. Tashmetov, Bakhtiyar Madaminov, N.B. Ismatov +2

    MaqolaQuantum Dots Synthesis And PropertiesInternational Journal of Modern Physics B202412 iqtibos
    ABI

  3. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

    Ye Shen, Xuan Fang, Xiang Ding +6

    Maqola20207 iqtibos
    ABI

  4. Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

    A. vom Felde, Klaus Kern, G. S. Higashi +4

    Maqola19904 iqtibos
    ABI

  5. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    П. В. Середин, A. V. Fedyukin, I. N. Arsentyev +5

    Maqola20164 iqtibos
    ABI

  6. The influence of electron beams to structure parameters of multi walled carbon nanotube

    I.I. Yuldashova, M. Yu. Tashmetov

    MaqolaOchiq kirishCarbon Nanotubes in CompositesPhysica B Condensed Matter20193 iqtibos
    ABI

  7. Atomic Radii in Crystals

    J. C. Slater

    Maqola19643 iqtibos
    ABI

  8. Porous layers on compensated GaAs:Cr

    A. S̆imkien≐, J. Sabataityt≐, V. Karpus +4

    Maqola20033 iqtibos
    ABI

  9. Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges

    Z. P. Wang, L. Ley, M. Cardona

    Maqola19823 iqtibos
    ABI

  10. Atomic Screening Constants from SCF Functions. II. Atoms with 37 to 86 Electrons

    E. Clementi, D. L. Raimondi, William P. Reinhardt

    Maqola19673 iqtibos
    ABI

  11. Materials science and engineering: An introduction

    Clive R. Clayton

    Maqola19873 iqtibos
    ABI

  12. Atomic and electron structure of the GaAs (001) surface

    S. E. Kulkova, С. В. Еремеев, A. V. Postnikov +2

    Maqola20072 iqtibos
    ABI

  13. GaAs nanocrystals: Structure and vibrational properties

    Jhasaketan Nayak, S.N. Sahu, Satoshi Nozaki

    Maqola20052 iqtibos
    ABI

  14. Microhardness profile in heteroepitaxial InAs/GaAs structures

    E. P. Trifonova, L. Hitova

    Maqola19932 iqtibos
    ABI

  15. Effects of oxygen implantation in GaAs

    L. He, W.A. Anderson

    Maqola19932 iqtibos
    ABI

  16. Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

    H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer

    Maqola20072 iqtibos
    ABI

  17. High-purity GaAs and Cr-doped GaAs epitaxial layers by MBE

    H. Morkoç, A. Y. Cho

    Maqola19792 iqtibos
    ABI

  18. Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

    J. Schneider, B. Dischler, H. Seelewind +5

    Maqola19892 iqtibos
    ABI

  19. Brinell and Vickers Hardness Measurement Using Image Processing and Analysis Techniques

    Pedro P. Rebouças Filho, Tarique da Silveira Cavalcante, Victor Hugo C. de Albuquerque +1

    Maqola20092 iqtibos
    ABI

  20. Experimental evidence for a negative-<i>U</i>center in gallium arsenide related to oxygen

    H. Ch. Alt

    Maqola19902 iqtibos
    ABI

  21. Characterization of Physical, Thermal and Structural Properties of Chromium (VI) Oxide Powder: Impact of Biofield Treatment

    Mahendra Kumar Trivedi

    Maqola20152 iqtibos
    ABI

  22. Mikro- und Ultramikrohärteprüfung an GaAs-Einkristallen

    F. Bergner, Ute Bergmann, Michael Schäper +2

    Maqola20012 iqtibos
    ABI

  23. Room temperature ferromagnetism in single-phase Zn1−x Mn x S diluted magnetic semiconductors fabricated by co-precipitation technique

    M. Hassan, Saima Younas, Falak Sher +3

    Maqola20172 iqtibos
    ABI

  24. Measurement uncertainty of surface roughness measurement

    G Farkas, Ágota Drégelyi-Kiss

    Maqola20182 iqtibos
    ABI

  25. Characterization of GaAs and GaAs/Cr/GaAs interfacial layers fabricated via magnetron sputtering on silicon (100)

    Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Manizales 170004, Colombia, Camilo Pulzara-Mora, José Doria-Andrade +7

    Maqola20242 iqtibos
    ABI