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Ish: Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

1. Impact of Precursor Molar Concentration on the Structural and Optical Properties of ZnO Thin Films Synthesized by Ultrasonic Spray Pyrolysis

   Azamat O. Arslanov, Sh. U. Yuldashev, Noiba U. Botirova +3

   MaqolaOAOchiq kirishZnO doping and propertiesPhysical Science International Journal20257 iqtibos

   ABIABI:AkademIndex/2026.other.313604

2. Sarlavhasiz

   Boshqa7 iqtibos

   ABIABI:AkademIndex/2026.other.313605

3. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   MaqolaAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20244 iqtibos

   ABIABI:AkademIndex/2024.article.000393

4. Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applications

   Soumi Saha, Madadi Chetan Kodand Reddy, Tati Sai Nikhil +6

   Maqola20234 iqtibos

   ABIABI:AkademIndex/2026.other.313601

5. Memristive Devices from CuO Nanoparticles

   Pundalik D. Walke, Abu ul Hassan S. Rana, Sh. U. Yuldashev +5

   MaqolaOAOchiq kirishAdvanced Memory and Neural ComputingNanomaterials20203 iqtibos

   ABIABI:AkademIndex/2020.article.000254

6. Sarlavhasiz

   Boshqa3 iqtibos

   ABIABI:AkademIndex/2026.other.313599

7. Negative differential resistance and resistive switching in SnO2/ZnO interface

   Rohit Pant, Nagabhushan Patel, Karuna Kar Nanda +1

   Maqola20173 iqtibos

   ABIABI:AkademIndex/2026.other.313600

8. Sarlavhasiz

   Boshqa3 iqtibos

   ABIABI:AkademIndex/2026.other.313602

9. Sarlavhasiz

   Boshqa3 iqtibos

   ABIABI:AkademIndex/2026.other.313603