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17 ta ish

Ish: NDR in Co:SnO <sub>2</sub> Memristors: Nanocluster Control for Enhanced Performance

  1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    MaqolaOchiq kirishAdvanced Memory and Neural ComputingEast European Journal of Physics20257 iqtibos
    ABI

  2. Sarlavhasiz

    Boshqa7 iqtibos
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  3. Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides

    Ruijing Ge, Xiaohan Wu, Myungsoo Kim +6

    MaqolaOchiq kirish20175 iqtibos
    ABI

  4. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    MaqolaGa2O3 and related materialsCrystal Growth & Design20254 iqtibos
    ABI

  5. Memristive behavior of ZnO/NiO stacked heterostructure

    Rui Zhang, Sh. U. Yuldashev, Jung‐Kyu Lee +3

    Maqola20132 iqtibos
    ABI

  6. Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

    Akihito Sawa, Toshihiro Fujii, M. Kawasaki +1

    MaqolaOchiq kirish20042 iqtibos
    ABI

  7. Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

    Thomas Heine

    Maqola20142 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
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  9. Sarlavhasiz

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  10. Sarlavhasiz

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  11. Sarlavhasiz

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  12. Sarlavhasiz

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  13. Sarlavhasiz

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  14. Sarlavhasiz

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  15. Sarlavhasiz

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  16. Sarlavhasiz

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  17. Sarlavhasiz

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