Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

1. Capacitance-voltage characteristics and electrostatic field distribution in CdTe/Si heterojunctions: temperature dependence and theoretical modeling

   I. B. Sapaev, S. Sadullaev

   MaqolaOAOchiq kirish20253 iqtibos

   ABIABI:AkademIndex/2026.other.472867

2. Fabrication of Si/CdTe Heterostructure via Vacuum Thermal Evaporation: Synthesis and Properties Characterization

   I. B. Sapaev, S. Sadullaev, U. Kh. Rakhmonov

   MaqolaOAOchiq kirishChalcogenide Semiconductor Thin FilmsEngineering Technology & Applied Science Research20251 iqtibos

   ABIABI:AkademIndex/2025.article.002600

3. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesResults in Physics20261 iqtibos

   ABIABI:AkademIndex/2026.article.006836