Ushbu ishga iqtibos qilgan ishlar

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Ish: Doping of Silicon with Gadolinium Atoms – Structural Distribution and Raman Spectral Changes

1. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

   M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043892

2. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

   D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043976