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37 ta ish

Ish: Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

  1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

    M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

    MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20258 iqtibos
    ABI

  2. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

    Ye Shen, Xuan Fang, Xiang Ding +6

    Maqola20207 iqtibos
    ABI

  3. Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

    Authit Phakkhawan, Aparporn Sakulkalavek, Siritorn Buranurak +7

    Maqola20226 iqtibos
    ABI

  4. Structure and morphology of electron-irradiated ZnSe

    M. Yu. Tashmetov, Bakhtiyar Madaminov

    MaqolaChalcogenide Semiconductor Thin FilmsRadiation effects and defects in solids20255 iqtibos
    ABI

  5. Influence of high-fluence electron irradiation on the band gap, Raman spectra, and microhardness of ZnSe

    M. Yu. Tashmetov, Bakhtiyar Madaminov

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysica Scripta20254 iqtibos
    ABI

  6. Oxidation of GaAs(110) with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">NO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Infrared spectroscopy

    A. vom Felde, Klaus Kern, G. S. Higashi +4

    Maqola19904 iqtibos
    ABI

  7. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    П. В. Середин, A. V. Fedyukin, I. N. Arsentyev +5

    Maqola20164 iqtibos
    ABI

  8. A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation

    Jingxuan He, Ye Shen, Bo Li +6

    Maqola20204 iqtibos
    ABI

  9. Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode

    Shailesh K. Khamari, V. K. Dixit, Tapas Ganguli +5

    Maqola20103 iqtibos
    ABI

  10. Charge states and quantitative infrared spectroscopy of electrically active oxygen centers in gallium arsenide

    H. Ch. Alt, Y. V. Gomeniuk, U. Kretzer

    Maqola20072 iqtibos
    ABI

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  17. Phonons in a one-dimensional microfluidic crystal

    Tsevi Beatus, Tsvi Tlusty, Roy Bar‐Ziv

    Maqola20062 iqtibos
    ABI

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