Temperature and Infrared Quenching of Equilibrium Conductivity in CdSexS1-x Film

A method for obtaining CdSe, CdSexS1-x films with high photosensitivity has been developed. This method involves thermal treatment of freshly prepared films in vacuum and air in a specially prepared quasi-hermetic chamber in the presence of CdCl2 or CuCl2, which ensures uniform diffusion of sensitizing substances. Experiments have shown that CdSe, CdSexS1-x films with stable and reproducible electrophysical properties are obtained by heating at the following temperatures: in air in the presence of CdCl2 – 470℃; in the presence of CuCl2 – 300℃; in vacuum – 480℃. Temperature and infrared quenching of equilibrium conductivity are observed only in optimally photosensitive samples with both fast (r) and slow (s) recombination centers and efficiently operating intercrystalline barriers. However, various external influences significantly affect the carrier motion, leading to the loss of high photosensitivity of the sample. Infrared quenching of equilibrium conductivity is observed at T < 300K and low infrared light intensities IIR < 10-1 lx in the entrance spectral absorption range of 1.0 ÷ 3.0 μm, and a pronounced photoconductivity with a clearly defined entrance is observed at IIR ≥ 10-1 lx.

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