Investigation of the functional capability of modified silicon-based photodiodes structure

Based on the experimental data, the results of the study of photoelectric and gain characteristics of modified multi-barrier photodiode Au-nCdS-nSi-pCdTe-Au structures are presented, which are obtained by the method of vacuum evaporation in a quasi-closed volume by sputtering cadmium sulfide and cadmium telluride layers on a silicon substrate with a specific resistance of 607.47 Ohm⋅cm. It is shown that the structures in the passing direction of the current at low illumination levels operate as injection photodiodes, and also the optical spectral range (0.3÷0.95 μm) covers from the nSi-pCdTe-Au side and (1.0÷1.4 μm) from the Au-nCdS-nSi side with a photosensitivity of 0.57 A/W at a wavelength of 1310 nm. In addition, the possibility of their application in optical power attenuation meters is considered.

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