Vacancy defects induce electronic orbital occupation state to enhance the performance of Ni-C-N supercapacitors
Haocheng PengQinglei GuYan YanChongyang TangJinxiong WuYaya WangTao DuRui‐Pin ChenXin LiuXiuling YanSeytkhan AzatBekchanov DavronbekNational University of UzbekistanXintai SuSouth China University of Technology
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