Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon
M.Yu. TashmetovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSh. MakhkamovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanSohibjon EgamovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanN.T. SulaymonovLabaratory of radiation Physics and Techniques of Solid-State Electronics, Institute of Nuclear Physics, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanKh.N. DjangabaevDepartment of Semiconductor Physics, Karakalpak State University, Ch. Abdirov Street, Nukus, Uzbekistan
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