Asosiy kontentga oʻtish
Maqola

Doping-dependent phenomenological description of the in-plane penetration depth in HgBa2CuO4+δ

Abdullo AhadovDepartment of Physics, Bukhara State University, Bukhara 200117, UzbekistanOgabek TemirovDepartment of Physics, Bukhara State University, Bukhara 200117, UzbekistanDavron DzhuraevDepartment of Physics, Bukhara State University, Bukhara 200117, Uzbekistan
2026en
Ochiq kirishOltin

Litsenziya: cc-by

ABI

Annotatsiya

A doping-dependent phenomenological model for the zero-temperature in-plane London penetration depth λ ab 0 in H g B a 2 C u O 4 + δ is developed on the basis of the Casimir–Kempf approach. The description combines the corresponding scaling relation for λ ab 0 with doping-dependent expressions for the superconducting transition temperature, anisotropy, and condensate participation factor. The superfluid density is expressed in terms of the hole concentration per C u O 2 plane, while the condensate fraction is treated as a doping-dependent quantity. The resulting expression captures the main features of the doping evolution of the penetration depth and enables a consistent comparison with available experimental data.

Hali tarjima qilinmagan

Identifikatorlar

Iqtiboslar va manbalar