Doping-dependent phenomenological description of the in-plane penetration depth in HgBa2CuO4+δ
Annotatsiya
A doping-dependent phenomenological model for the zero-temperature in-plane London penetration depth λ ab 0 in H g B a 2 C u O 4 + δ is developed on the basis of the Casimir–Kempf approach. The description combines the corresponding scaling relation for λ ab 0 with doping-dependent expressions for the superconducting transition temperature, anisotropy, and condensate participation factor. The superfluid density is expressed in terms of the hole concentration per C u O 2 plane, while the condensate fraction is treated as a doping-dependent quantity. The resulting expression captures the main features of the doping evolution of the penetration depth and enables a consistent comparison with available experimental data.
Hali tarjima qilinmagan