Modeling the Density-of-States Spectrum Under Strain in Doped Silicon p‑Si<B, Mn>
M.A. RakhmanovChirchik State Pedagogical University, Tashkent, UzbekistanИ.Г. ТурсуновChirchik State Pedagogical University, Tashkent, UzbekistanOdiljon MamatkarimovDepartment of Energy Engineering, Namangan State Technical University, Namangan, UzbekistanN. Yu. SharibaevNamangan davlat texnika universitetiS.S. SharipbaevDepartment of Energy Engineering, Namangan State Technical University, Namangan, Uzbekistan
2026
Ochiq kirishOlmos
Litsenziya: cc-by
ABI
Annotatsiya
A deformation (strain) model of the spectrum of the density of localized states Nss(E,X) in p‑Si⟨B,Mn⟩ under uniaxial pressure X is presented. It is shown that the shifts of trap levels can be described by the deformation energy Ed = κX, a mechanical analogue of kT. At a fixed temperature T = 77 K, increasing X leads to a shift and restructuring of the spectrum: thermodonor (TD) levels move toward the conduction band, whereas manganese (Mn) levels shift toward the valence band, which agrees with the opposite trends observed in ρ(X) and μ(X).
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