Investigation of the Microstructure of Photosensitive CdSe and CdSe:Cd,Cl Thin Films

The substructure of freshly prepared photosensitive CdSe and doped CdSe:Cd, Cl thin films was investigated with respect to the influence of substrate temperature Ts and heat-treatment time in air in the presence of vapor. The results of electron diffraction and electron microscopy studies for films prepared under different technological conditions are also presented. It was established that the texture axis of the as-prepared CdSe films is perpendicular to the substrate plane. As Ts increases from 250 to 400°C, the texture-axis dispersion angle, the fraction of the hexagonal phase, the crystallite size, and the coherent X-ray scattering region size increase. After annealing in air in the presence of CdCl2 vapor at 300°C, films prepared at Ts =250°C exhibit reorientation of crystallites from the (111)c+(0002)h plane, which is parallel to the substrate plane, to the (10¯1 3) orientation through the (311)c+(11¯1 2)h planes. This reorientation is accompanied by an increase in crystallite size and Dcsr, and by a decrease in the lattice parameter and the minimum dislocation density.

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