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Ish: Fabrication and Electrical Transport Properties of Triple-Barrier GaAs-BASED M–p–n–M Structures
Limiting characteristics of silicon diode temperature sensors for determining the maximum temperature with specified measurement accuracy
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R. R. Kabulov, L. O‘. Shuhratova, K. T. Suyarov +2
MaqolaOchiq kirishPerovskite Materials and Applicationse-Journal of Surface Science and Nanotechnology20251 iqtibosABI