Determination of the Energy Spectrum of the Density of States Under Uniaxial Pressure

This paper considers the influence of hydrostatic pressure on the energy spectrum of the density of localized states in doped silicon n-Si, n-Si⟨Ni⟩ and p-Si⟨B,Mn⟩. Based on the experimental dependence of the relative resistivity ρp/ρ0 on pressure, a model is constructed in which pressure enters via the deformation energy Ed = κP, yielding a linear shift of the trap levels Ei(P) = Ei(0)+αiEd. It is shown that for different impurity centers (Mn, Ni) the deformation sensitivity of the levels differs in both sign and magnitude, which is manifested in qualitatively different behavior of ρp/ρ0(P). A procedure is proposed for reconstructing the relative electron concentration N(P)/N0 and the associated spectrum Nss(E,P) from the experimental ρp/ρ0(P) curves. A comparison is made with the conventional temperature DLTS model, and the possibility of using a “tenso-DLTS” approach to identify donor and acceptor centers, their deformation potentials and symmetry is substantiated. The results demonstrate that hydrostatic pressure is not only an external perturbation, but also an effective spectrum-forming parameter for controlling the electronic properties of doped silicon.

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