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On High-Efficiency Third-Harmonic Generation via Cascaded χ(2) Processes in Orientation-Patterned GaAs

Alisher RajabovDepartment of Electrical Engineering and Energy, Urgench State University Named After Abu Rayhan Biruni, 14 Kh. Alimdjan Str., Urgench 220100, UzbekistanObid SabirovDepartment of Electrical Engineering and Energy, Urgench State University Named After Abu Rayhan Biruni, 14 Kh. Alimdjan Str., Urgench 220100, UzbekistanBogibek UrinovDepartment of Electrical Engineering and Energy, Urgench State University Named After Abu Rayhan Biruni, 14 Kh. Alimdjan Str., Urgench 220100, UzbekistanGaetano AssantoNooEL—Nonlinear Optics and OptoElectronics Lab, Department DIIEM, University “Roma Tre”, Via della Vasca Navale 84, 00146 Rome, ItalyУ. К. СапаевTashkent State University of Economics
2026en
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We numerically investigate high-efficiency third-harmonic generation via cascaded χ(2) processes in orientation-patterned Gallium Arsenide waveguides comprising two quasi-phase-matched sections. The first section is phase-matched for second-harmonic generation (ω→2ω) and the second for sum-frequency generation (ω+2ω→3ω). Assuming a continuous-wave pump at λ=10.61μm, the structure converts the fundamental to the third harmonic at λ3ω≈3.54μm, within the atmospheric transmission window. By solving the coupled-wave equations, we optimize the number of domains in each section and estimate THG conversion efficiencies exceeding 90% at a pump intensity of ∼100MW/cm2 in a total crystal length ≈1.6cm. Using temperature-dependent parameters from the Sellmeier equations for GaAs, we also address thermal tuning of quasi-phase-matching over the range 22–300 °C and pinpoint robustness against fabrication tolerances of ±10 domains and ±2% in domain length. Our results indicate two-section orientation-patterned GaAs as a suitable platform for high-efficiency frequency tripling from mid-infrared.

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