INFLUENCE OF DEFECTS ON THE ELECTRICAL CONDUCTIVITY OF SBₓSEᵧ THIN FILMS PREPARED BY THE INDEPENDENT SOURCE VAPOR TRANSPORT TECHNIQUE

In this study, the structural and electrophysical properties of SbxSey thin films grown at different source temperatures using the independent-source vapor transport method were investigated. The composition of the thin films was determined by energy-dispersive X-ray spectroscopy (EDS), revealing that as the source temperature increases, the Sb/Se atomic ratio shifts from Se-rich to Sb-rich. Specifically, a Se-rich composition (Sb/Se ≈ 0.51) was observed in films obtained at 500 °C, a stoichiometric composition (Sb/Se ≈ 0.67) at 525 °C, and an Sb-rich composition (Sb/Se ≈ 0.82) at 550 °C. The temperature dependence of electrical conductivity was measured using a cryostat, and activation energies were calculated from Arrhenius analysis. According to the results, the following activation energies were identified for the corresponding samples: Eᵥ + 0.578 eV for the 500 °C film, Eᵥ + 0.111 eV for the 525 °C film, and E꜀ − 0.518 eV for the 550 °C film.

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