Obtaining Silicon Specimens with Different Crystallographic Orientations by Diffusion Doping with Manganese Atoms

Abstract— The paper examines the process of obtaining silicon specimens diffusion-doped with manganese impurity atoms and possessing various crystallographic orientations. The objective of the study is to investigate the effect of diffusion doping with manganese impurity atoms on the physicochemical and tensile properties of silicon, as well as to produce silicon specimens with [111], [110], and [100] crystallographic orientations. The main technological regimes for the diffusion of manganese atoms in silicon at different temperatures and crystallographic orientations, which affect the distribution of manganese impurity atoms in the crystal lattice, have been determined. Experimental data have confirmed that the crystallographic orientation significantly influences the doping efficiency and the characteristics of the resulting materials. The results of this work may be useful for the development of new semiconductor materials in which electrophysical parameters strongly depend on the crystallographic orientation.

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