Field Properties of Diode Structures Based on Solid Solution “Silicon-Tin”

This article presents the results of studies of the conductivity mechanism in pSi-nSi1-δSnδ (0 ≤ δ ≤ 0.04) structures based on the Si1-δSnδ solid solution with base n-layer thicknesses W ≈ 20-30 μm. The studied samples were obtained in a single technological cycle by the liquid-phase epitaxy method on single-crystal p-Si substrates with the (111) orientation. The results of experimental and computational studies showed that the Poole-Frenkel effect is observed in pSi-nSi1-δSnδ (0 ≤ δ ≤ 0.04) structures at room temperature. This circumstance allows the use of high voltage effects on the parameters of various devices based on the solid solution Si1-δSnδ. Thus, there is interest in using this effect in the conversion of thermal energy to electrical energy based on the thermovoltaic effect. Also, the obtained results show the potential of using solid solutions Si1-δSnδ (0 ≤ δ ≤ 0.04), grown on silicon substrates, as an active material in thermal energy converters.

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