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Effect of annealing duration on lattice relaxation and electrical properties of sol-gel β-Ga2O3 thin films

Noiba U. BotirovaCenter for Nanotechnologies Development, National university of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, UzbekistanSh. U. YuldashevCenter for Nanotechnologies Development, National university of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, UzbekistanAndrey NebesniyDepartment of Physics, National University of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, UzbekistanAzamat O. ArslanovDepartment of Physics, National University of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, UzbekistanJamoliddin X. MurodovCenter for Nanotechnologies Development, National university of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, UzbekistanRa’no Sh. SharipovaCenter for Nanotechnologies Development, National university of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, UzbekistanJavohir Sh. KhudoykulovDepartment of Physics, National University of Uzbekistan, 4 University Street, Almazor District, Tashkent 100174, Uzbekistan

2026en

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ABI

Annotatsiya

β-Ga 2 O 3 thin films were synthesized on oxidized Si substrates using a sol-gel spin-coating method and subsequently annealed at 1050 °C for different durations (2 h and 6 h) to investigate the influence of prolonged thermal treatment on microstructural evolution and electrical behavior. X-ray diffraction (XRD) combined with Williamson–Hall analysis reveals an increase in average crystallite size from 16 nm to 20 nm, a reduction in compressive micro-strain from −0.00257 to −0.00188, and a decrease in dislocation density from 3.9 × 10¹¹ to 2.5 × 10¹¹ cm⁻², indicating progressive lattice relaxation with extended thermal treatment. Automated grain size analysis from scanning electron microscopy (SEM) images (N > 4900 grains per sample) confirms lognormal surface grain size distributions with comparable mean Feret diameters, consistent with sub-grain structural refinement detectable by XRD but not resolved at the SEM imaging scale. AC conductivity measurements in the frequency range 20 Hz–200 kHz over 300–360 K reveal a transition in charge transport regime: the 2 h annealed film exhibits thermally activated hopping conduction consistent with the correlated barrier hopping (CBH) model (s: 0.73→0.63, Wm: 0.58→0.51 eV), while the 6 h annealed film shows near-linear frequency dependence (s ≈ 0.984) characteristic of the nearly constant loss (NCL) regime. Impedance spectroscopy confirms a thermally activated relaxation (E a ≈ 0.043 eV) in the 2 h sample and a persistent defect-assisted low-frequency relaxation (E a ≈ 0.43 eV) in the 6 h sample. Optical analysis indicates a bandgap redshift from 4.70 eV to 4.57 eV, consistent with strain relaxation and grain boundary reduction. These results demonstrate that annealing duration is an effective parameter for controlling lattice relaxation and electrical transport behavior in sol-gel derived β-Ga 2 O 3 thin films, with implications for optimizing their performance in wide-bandgap electronic and optoelectronic applications.

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DOI: 10.1016/j.tsf.2026.141000

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