Analytical reconstruction of the density-of-states spectrum in silicon under uniaxial pressure

This paper considers the influence of uniaxial pressure on the energy spectrum of the density of localized states in silicon, with the model results illustrated for p-Si⟨B,TD⟩, p-Si⟨B,Mn⟩, and n-Si⟨Ni⟩. Based on pressure-dependent relative-resistivity behavior, a model is constructed in which pressure enters through the deformation energy Ed = κX and leads to a linear shift of trap levels Ei(X) = Ei(0)+αiEd. The defect examples exhibit different effective deformation sensitivities, which are manifested in different resistivity trends. A procedure is proposed for approximate reconstruction of the relative electron concentration N(X)/N0 and the associated spectrum Nss(E,X) from the pressure-dependent response. A comparison is made with the conventional temperature DLTS model, and a tenso-DLTS-type analytical framework is proposed for pressure-sensitive defect characterization. For the calculations at T = 77 K and X = 0–6 × 10^8 Pa, the relative resistivity decreases to about 0.74 for p-Si⟨B,TD⟩ and increases to about 1.55 for p-Si⟨B,Mn⟩; for n-Si⟨Ni⟩, the two-step change 1 → 9 → 15 corresponds within the model to N(X)/N0 ≈ 1 → 0.11 → 0.07. The proposed reconstruction is an analytical proof of concept and requires independent experimental and atomistic validation.

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