CHANGE IN THE ELECTRICAL RESISTANCE OF POROUS (Bi0,3Sb0,7)2Te3 THIN FILMS UNDER CYCLIC ALTERNATING DEFORMATION AND TEMPERATURE

Porous (Bi0,3Sb0,7)2Te3 films were studied under cyclic alternating deformation. The resistance minimum shifted from 333 K to 408 K as the number of deformation cycles increased to 5×10⁵, while the magnitude of the negative temperature coefficient of resistance decreased. The results indicate the potential of porous Bi–Sb–Te films for fatigue-damage sensing.

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