Acoustic properties of silicon crystals at high temperatures
Farkhad AkhmedzhanovInstitute of Ion Plasma Laser TechnologiesVladimir N. AvdievichU.A. Arifov Institute of Ion Plasma and Laser Technologies, Academy of Sciences of Uzbekistan Republic, https://ror.org/01g853f75Ibrat Sh. ToshpulatovU.A. Arifov Institute of Ion Plasma and Laser Technologies, Academy of Sciences of Uzbekistan Republic, https://ror.org/01g853f75Asror A. UlashovU.A. Arifov Institute of Ion Plasma and Laser Technologies, Academy of Sciences of Uzbekistan Republic, https://ror.org/01g853f75Temur Sh. Mustafaev
2026
ABI
Annotatsiya
The temperature dependences of the propagation velocity and attenuation coefficient of longitudinal acoustic waves along the [110] direction in silicon crystals were investigated in the 300–440 K range. The temperature coefficient of the longitudinal acoustic wave velocity in this range was determined to be −2.48·10–4 K–¹. It is shown that a sharp increase in the attenuation coefficient of 30 MHz longitudinal acoustic waves is observed at high temperatures. It is explaned by the contribution of the acoustoelectronic interaction between the acoustic wave and charge carriers via the deformation potential.
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