Modeling the Temperature and Magnetic Field Dependence of the Band Gap in Narrow-Zone Quantum Well Semiconductors

The fundamental physical parameter of both bulk and low-dimensional semiconductor structures is the band gap (𝐸𝑔 3𝑑 ,𝐸𝑔 2𝑑 ), whose energetic width allows the prediction of the operational parameters of semiconductor-based devices in advance. Therefore, the determination of 𝐸𝑔 3𝑑 and 𝐸𝑔 2𝑑 (in cases where the band gap of newly synthesized materials is not known) is considered one of the primary tasks in semiconductor heterostructure technology. Furthermore, another important feature of 𝐸𝑔 is its strong sensitivity to external influences. Indeed, variations in 𝐸𝑔 resulting from such effects can fundamentally alter the physical and chemical properties of semiconductor devices.

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