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Hydroxyl‐Rich Sodium Gluconate Enables Dense SAM Assembly and Enhances Conductivity in NiO x ‐Based Inverted Perovskite Solar Cells

Junkang HOUState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an People's Republic of ChinaXilai HeState Key Laboratory of Solidification ProcessingHui ChenState Key Laboratory of Solidification ProcessingGuangpeng FengState Key Laboratory of Solidification ProcessingRanhao YinState Key Laboratory of Solidification Processing Center for Nano Energy Materials School of Materials Science and Engineering Northwestern Polytechnical University Xi'an People's Republic of ChinaZihao ZhouState Key Laboratory of Solidification ProcessingXingyan WANGState Key Laboratory of Solidification ProcessingChenhao WenState Key Laboratory of Solidification ProcessingDapeng WangSchool of Materials Science and Engineering Shaanxi Normal University Xi'an People's Republic of ChinaBing WangShaanxi Key Laboratory of Liquid Crystal Polymer Intelligent Display Technological Institute of Materials & Energy Science (TIMES) Xijing University Xi'an People's Republic of ChinaQi CaoIlhom TojiboyevInstitute of Ion Plasma Laser Technologies Tashkent UzbekistanXuanhua LiResearch and Development Institute of Northwestern Polytechnical University in Shenzhen Shenzhen People's Republic of China
2026en
ABI

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ABSTRACT Nickel oxide (NiO x )/self‐assembled monolayer (SAM) composite hole transport layers represent a promising configuration for inverted perovskite solar cells (IPSCs). Nevertheless, the insufficient electrical conductivity of NiO x and the limited number of binding sites on its surface lead to incomplete monolayer coverage, resulting in substantial interfacial charge losses that constrain efficiency improvements. To address these issues, we introduce hydroxyl‑rich sodium gluconate (SG) into the NiO x solution. Gluconate anions from SG modulate the electronic properties of NiO x , thereby enhancing its conductivity. Meanwhile, the abundant hydroxyl groups along the SG backbone furnish additional hydrogen‐bonding sites for the subsequent adsorption of the SAM, promoting the formation of a compact and well‐ordered interfacial molecular layer. This dense SAM not only suppresses leakage currents but also optimizes the energetic cascade at the heterojunction, ultimately enabling the resulting IPSCs to achieve a power conversion efficiency of 26.24%. During maximum‐power‐point operation under ISOS‑L‑1 protocol, the optimized device preserves 91.6% of the starting output after 1000 h. This work establishes a versatile interfacial engineering approach that overcomes limitations in both SAM assembly and charge transport, offering new opportunities for the development of highly efficient and durable IPSCs.

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