Charged Boundaries

The continuing miniaturization of semiconductor devices beyond the 2 nm node imposes extraordinary demands on materials processing, device architecture, and quantum-physical understanding. This chapter examines the interplay of plasma physics, semiconductor device engineering, and emergent quantum phenomena that define the frontier of advanced electronic manufacturing. Plasma-based fabrication, including inductively coupled plasma etching, atomic layer etching (ALE), and extreme ultraviolet (EUV) lithography using tin-droplet plasmas, provides atomic-scale precision. Device architectures have evolved from planar MOSFETs to FinFETs and gate-all-around (GAA) nanowire transistors, while emerging concepts like tunneling FETs (TFETs) and single-molecule transistors leverage quantum effects for ultralow power. Two-dimensional materials such as MoS2 and transition metal dichalcogenides offer atomically thin channels compatible with plasma fabrication. This chapter integrates experimental advances, theoretical models, and future research directions for quantum-scale electronics.

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