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Improved efficiency by insertion of Zn1−xMgxO through sol-gel method in ZnO/Sb2Se3 solar cell

Kanghua LiWuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR ChinaRokas KondrotasShenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, PR ChinaChao ChenShenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, PR ChinaShuaicheng LuWuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR ChinaXixing WenShenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen 518000, PR ChinaDeng‐Bing LiWuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR ChinaJiajun LuoWuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR ChinaYang ZhaoWuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR ChinaJiang TangWuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR China
2018en

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