Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

Tuo ShiLaboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR ChinaRui YangLaboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR ChinaXin GuoLaboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, PR China

2016en

Ochiq kirish: yoʻq

ABI

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Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/j.ssi.2016.09.001

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