Extraordinary role of Zn in enhancing thermoelectric performance of Ga-doped n-type PbTe
Zhong‐Zhen LuoDepartment of Chemistry, Northwestern University, Evanston, Illinois 60208, USASongting CaiDepartment of Chemistry, Northwestern University, Evanston, Illinois 60208, USAShiqiang HaoDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USATrevor P. BaileyDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109, USAYubo LuoSchool of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue 639798, SingaporeWenjun LuoFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. ChinaYan YuFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. ChinaCtirad UherDepartment of Physics, University of Michigan, Ann Arbor, Michigan 48109, USAChristopher WolvertonDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAVinayak P. DravidDepartment of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USAZhigang ZouFujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. ChinaQingyu YanSchool of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue 639798, SingaporeMercouri G. KanatzidisDepartment of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
2021en
Ochiq kirishBronza
ABI
Annotatsiya
The discordant Zn and Ga atoms raise the carrier concentration and soften phonon modes, resulting in superior performance nanostructured n-type PbTe.
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