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Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO

Wensheng YanUniversity of Science and Technology of China National Synchrotron Radiation Laboratory, , Hefei, Anhui 230029, People’s Republic of ChinaZhihu SunUniversity of Science and Technology of China National Synchrotron Radiation Laboratory, , Hefei, Anhui 230029, People’s Republic of ChinaQinghua LiuNational Synchrotron Radiation LaboratoryZhongrui LiNational Synchrotron Radiation LaboratoryZhiyun PanUniversity of Science and Technology of China National Synchrotron Radiation Laboratory, , Hefei, Anhui 230029, People’s Republic of ChinaJie WangNational Synchrotron Radiation LaboratoryShiqiang WeiUniversity of Science and Technology of China National Synchrotron Radiation Laboratory, , Hefei, Anhui 230029, People’s Republic of ChinaDan WangFudan University Department of Physics, Surface Physics Laboratory, and Synchrotron Radiation Research Center, , 220 Handan Road, Shanghai 200433, People’s Republic of ChinaYingxue ZhouFudan University Department of Physics, Surface Physics Laboratory, and Synchrotron Radiation Research Center, , 220 Handan Road, Shanghai 200433, People’s Republic of ChinaXinyi ZhangFudan University Department of Physics, Surface Physics Laboratory, and Synchrotron Radiation Research Center, , 220 Handan Road, Shanghai 200433, People’s Republic of China
2007en

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X-ray absorption fine structure (XAFS) and first-principles calculations were employed to study the structure and ferromagnetism origin of Zn0.97Mn0.03O thin film grown by metal organic chemical vapor deposition. The magnetization measurements indicate that this sample is ferromagnetic at room temperature. The Mn ions are located at the substitutional Zn sites as revealed by the Mn K-edge XAFS spectroscopy. Moreover, the O K-edge XAFS analysis indicated the existence of numerous Zn vacancies. Based on first-principles calculations, the authors propose that the Zn vacancy can induce the room-temperature ferromagnetism in Mn-doped ZnO.

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