Morphological and Magnetotransport Properties of Mn-Substituted ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis

Abstract. Diluted magnetic semiconductors (DMSs) offer unique combinations of semiconducting and magnetic properties, making them attractive for spintronic applications. Among oxide semiconductors, Mn-substituted ZnO stands out due to its wide band gap, chemical stability, and potential for room-temperature magnetism. This study compares pure ZnO and Zn₀.₉₅Mn₀.₀₅O thin films deposited on Si(100) substrates by ultrasonic spray pyrolysis. Zinc acetate and manganese acetate served as precursors, with thiourea added to aid film formation. Structural morphology was analyzed via scanning electron microscopy (SEM); magnetotransport properties were assessed by room-temperature magnetoresistance measurements. SEM revealed compact, polycrystalline films composed of uniformly distributed nanograins, with average thickness around 200 nm. Magnetoresistance measurements showed negligible response in pure ZnO, while Mn substitution led to significant positive magnetoresistance, attributed to spin-dependent carrier scattering by magnetic ions. These findings confirm that Mn incorporation effectively enhances the magnetotransport properties of ZnO thin films without degrading their morphology, highlighting their promise for future spintronic and magnetoelectronic devices.

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