Effect of radiation-induced defects on silicon solar cells

Recent experiments indicated an anomalous degradation of n+–p–p+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the degradation. The effect of the radiation-induced deep defects with energy levels Ec−0.17, Ec−0.1, Ec−0.43, and Ev+0.36 eV on solar cells is studied in this article. It is shown that among these defects only the defect with energy level Ec−0.1 eV causes the anomalous degradation, when the base thickness W is approximately 250 μm.

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