On the Low‐Temperature Internal Friction in Silicon
P. F. KromerInstitute of Nuclear Physics, Academy of Sciences of the Uzbekian SSR, Tashkent‡L. P. KhiznichenkoInstitute of Nuclear Physics, Academy of Sciences of the Uzbekian SSR, Tashkent
1967en
Ochiq kirish: yoʻq
ABI
Annotatsiya
Abstract The internal‐friction relaxation peak observed in silicon single crystals [6, 7] is discussed using Brailsford's concept of “built‐in” kinks on dislocations. The numerical estimates of the theory agree satisfactorily with the experimental data. The correlation of two theories based on thermally generated and “built‐in” kinks is also considered.
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