Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region
V. V. UtochkinInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaM. A. FadeevInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaS. S. KrishtopenkoUniversité de MontpellierV. V. RumyantsevInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaV. Ya. AleshkinInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaА. А. ДубиновLobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, RussiaS. V. MorozovInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, RussiaB. R. SemyaginInstitute of Semiconductor PhysicsМ. А. PutyatoInstitute of Semiconductor PhysicsE. A. EmelyanovInstitute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, RussiaВ. В. ПреображенскийInstitute of Semiconductor PhysicsV. I. GavrilenkoInstitute for Physics of Microstructures, Russian Academy of Sciences, 603087, Nizhny Novgorod, Russia
2020en
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Annotatsiya
The photoluminescence spectra of waveguide AlSb/InAs/GaInSb/InAs/AlSb quantum-well heterostructures designed for the generation of radiation at interband transitions in the mid-infrared region have been studied. The experimentally detected spectral lines are correlated with calculations of the band structure.
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