Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
Avinash P. NayakDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78712, Texas, USASwastibrata BhattacharyyaMaterials Research Center, Indian Institute of Science, Bangalore, 560-012, IndiaJie ZhuThe University of Texas at AustinJin LiuDepartment of Geological Sciences, The University of Texas at Austin, Austin, 78712, Texas, USAXiang Xia WuDepartment of Geological Sciences, The University of Texas at Austin, Austin, 78712, Texas, USATribhuwan PandeyMaterials Research Center, Indian Institute of Science, Bangalore, 560-012, IndiaChangqing JinInstitute of PhysicsAbhishek K. SinghMaterials Research Center, Indian Institute of Science, Bangalore, 560-012, IndiaDeji AkinwandeDepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, 78712, Texas, USAJung‐Fu LinDepartment of Geological Sciences, The University of Texas at Austin, Austin, 78712, Texas, USA
2014en
Ochiq kirishBronza
ABI
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