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Electronic properties of two-dimensional systems

Tsuneya AndoIBM Research - Thomas J. Watson Research CenterA. B. FowlerInstitute of Applied Physics, University of Tsukuba, Sakura, Ibaraki 305, Japan and IBM Thomas J Watson Research Center, Yorktown Heights, New York 10598Frank SternIBM Thomas J. Watson Research Center Yorktown Heights , New York, 10598
1982en

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ABI

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The electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed. Energy levels, transport properties, and optical properties are considered in some detail, especially for electrons at the (100) silicon-silicon dioxide interface. Other systems are discussed more briefly.

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