Maqola

Pressure dependence of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="italic">T</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">c</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>and charge transfer in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">YBa</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cu</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>(6.35≤<i>x</i>≤7) single crystals

C. C. AlmasanMaterials Science Division, Argonne National Laboratory, Argonne, Illinois 60439Seung Ho HanDepartment of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, California 92093B. W. LeeSandia National Laboratories, Albuquerque, New Mexico 87185-5800L. M. PauliusSandia National Laboratories, Albuquerque, New Mexico 87185-5800M. B. MapleSandia National Laboratories, Albuquerque, New Mexico 87185-5800B. W. VealSandia National Laboratories, Albuquerque, New Mexico 87185-5800J.W. DowneyApplied Physical Sciences (United States)A. P. PaulikasMaterials Science Division, Argonne National Laboratory, Argonne, Illinois 60439Z. FiskSandia National Laboratories, Albuquerque, New Mexico 87185-5800J. E. SchirberDepartment of Physics and Institute for Pure and Applied Physical Sciences, University of California, San Diego, La Jolla, California 92093

1992lv

ABI

Annotatsiya

The superconducting critical temperature ${\mathit{T}}_{\mathit{c}}$ of ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{\mathit{x}}$ single crystals (6.35\ensuremath{\lesssim}x\ensuremath{\lesssim}7) has been measured resistively as a function of pressure P (0\ensuremath{\le}P\ensuremath{\lesssim}20 kbar). The initial rate ${\mathit{dT}}_{\mathit{c}}$/dP exhibits three distinct regimes, a narrow plateau near x\ensuremath{\approxeq}7 with ${\mathit{dT}}_{\mathit{c}}$/dP\ensuremath{\approxeq}0.04 K/kbar, a plateau in the range 6.4\ensuremath{\lesssim}x\ensuremath{\lesssim}6.8, where ${\mathit{dT}}_{\mathit{c}}$/dP\ensuremath{\approxeq}0.43 K/kbar, and a maximum value \ensuremath{\sim}0.8 K/kbar at x\ensuremath{\approxeq}6.35. An analysis of the ${\mathit{T}}_{\mathit{c}}$(x,P) data using a phenomenological model yields a pronounced peak near x=6.8 in d\ensuremath{\Delta}${\mathit{n}}_{\mathit{h}}$(x)/dP, where \ensuremath{\Delta}${\mathit{n}}_{\mathit{h}}$(x) is the change in the hole density in the ${\mathrm{CuO}}_{2}$ planes relative to the value corresponding to the fully oxygenated sample.

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DOI: 10.1103/physrevlett.69.680

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