Fabrication of ultrafine silicon layers on sapphire
A. A. ShemukhinMoscow State University, Zelenograd, Moscow, 119991, RussiaYu. V. BalakshinMoscow State University, Zelenograd, Moscow, 119991, RussiaV. S. ChernyshEPIEL Company, Zelenograd, Moscow, 124460, RussiaAndrey PatrakeevResearch Institute of Material Science and Technology, Zelenograd, Moscow, 124460, RussiaS. GolubkovMoscow State University, Zelenograd, Moscow, 119991, RussiaN. N. EgorovEPIEL Company, Zelenograd, Moscow, 124460, RussiaA. I. SidorovResearch Institute of Material Science and Technology, Zelenograd, Moscow, 124460, RussiaB. A. MalyukovEPIEL Company, Zelenograd, Moscow, 124460, RussiaВ. Н. СтаценкоResearch Institute of Material Science and Technology, Zelenograd, Moscow, 124460, RussiaV. D. ChumakResearch Institute of Material Science and Technology, Zelenograd, Moscow, 124460, Russia
2012en
ABI
Annotatsiya
The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si+ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization annealing conditions are determined.
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