Pulsed laser deposition of ITO thin films and their characteristics
Dmitry ZuevInstitute on Laser and Information Technologies, Russian Academy of Sciences, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700, RussiaА. А. ЛотинRussian Academy of SciencesO. A. NovodvorskyInstitute on Laser and Information Technologies, Russian Academy of Sciences, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700, RussiaF. V. LebedevInstitute on Laser and Information Technologies, Russian Academy of Sciences, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700, RussiaО. Д. ХрамоваInstitute on Laser and Information Technologies, Russian Academy of Sciences, ul. Svyatoozerskaya 1, Shatura, Moscow oblast, 140700, RussiaI. A. PetuhovFaculty of Chemistry, Moscow State University, Moscow, 119899, RussiaPh. N. PutilinMoscow State UniversityA. N. ShatohinFaculty of Chemistry, Moscow State University, Moscow, 119899, RussiaM. N. RumyanzevaFaculty of Chemistry, Moscow State University, Moscow, 119899, RussiaА.М. ГаськовMoscow State University
2012en
ABI
Annotatsiya
The indium tin oxide (ITO) thin films are grown on quartz glass substrates by the pulsed laser deposition method. The structural, electrical, and optical properties of ITO films are studied as a function of the substrate temperature, the oxygen pressure in the vacuum chamber, and the Sn concentration in the target. The transmittance of grown ITO films in the visible spectral region exceeds 85%. The minimum value of resistivity 1.79 × 10−4 Ω cm has been achieved in the ITO films with content of Sn 5 at %.
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