Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: First-principle calculations of electronic and positronic properties of AlGaAs2

1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   MaqolaIon-surface interactions and analysisTechnical Physics201514 iqtibos

   ABIABI:AkademIndex/2026.other.095299

2. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

   Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

   MaqolaPhotocathodes and Microchannel PlatesTechnical Physics20198 iqtibos

   ABIABI:AkademIndex/2026.other.232443