A surface‐ionization method of detection of a neutral component of indium sputtering under bombardment by cluster ions
С. Н. МорозовArifov Institute of Electronics 100125 Tashkent UzbekistanУ. Х. РасулевU. Kh. Rasulev, Arifov Institute of Electronics, 100125 Tashkent, Uzbekistan
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ABI
Annotatsiya
A surface‐ionization method of measuring the total sputtering yield has been developed. The indium sputtering by Bi m + ( m = 1–7) cluster ions with energy 2–10 keV has been studied. A non‐additive increase in the total sputtering yield with the raise in the number of atoms in cluster projectiles has been found. Copyright © 2012 John Wiley & Sons, Ltd.
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