Enhanced Plasma Uniformity in RF Plasma With Side Multihole

Hyo‐Chang LeeDepartment of Electrical Engineering, Hanyang University, Seoul, KoreaChin‐Wook ChungDepartment of Electrical Engineering, Hanyang University, Seoul, Korea

2014en

ABI

Annotatsiya

Capacitively coupled plasma source with side multihole is studied. Due to the hollow cathode effect at the multihole, edge plasma density is strongly increased and thus, plasma uniformity is significantly enhanced.

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Identifikatorlar

DOI: 10.1109/tps.2014.2331680

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