The electrical properties of a solar cell with multiple nanoscale p-n transitions
T. A. DzhalalovTashkent University of Information Technology, Tashkent, UzbekistanE. Z. ImamovTashkent University of Information Technology, Tashkent, UzbekistanР. А. МуминовTashkent University of Information Technology, Tashkent, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
In the present work a theoretical model of the formation of a spatial charge zone in a fundamentally new contact structure that consists of a semi-conducting base with nanoinclusions on its surface is developed. The character of the new contact type is found to be fully defined by the electric capacity of the nanoinclusion, C 0. The difference between the properties of the new contact type in both structure and length and the analogous contact features that are typical for Schottki barriers, continuous p-n transitions, and heterotransitions is shown.
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