Generation of Charge Carriers in Uniformly Heated Si–Ge Films Heavily Doped with Titanium
Ш.К. КучкановArifov Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, UzbekistanХ. Б. АшуровArifov Institute of Ion-Plasma and Laser Technologies, Uzbek Academy of Sciences, Tashkent, 100125, Uzbekistan
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ABI
Annotatsiya
We have studied the generation of charge carriers and development of the electromotive force (emf) in uniformly heated n-type Si–Ge films heavily doped with titanium obtained by chemical-vapor deposition on p-type silicon substrates. A maximum emf value of ∼3 mV was observed at temperatures within 500–600 K for dark short-circuit currents ∼0.5–1 μA, the value of which increased with the temperature to reach ∼3 μA at 800 K.
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