New system of self-assembled GaSb/GaP quantum dots
D. S. AbramkinRzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, RussiaМ. А. PutyatoInstitute of Semiconductor PhysicsА. К. ГутаковскийRzhanov Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, 630090, RussiaB. R. SemyaginInstitute of Semiconductor PhysicsВ. В. ПреображенскийRussian Academy of Sciences Siberian BranchТ. С. ШамирзаевInstitute of Semiconductor Physics
2012en
ABI
Annotatsiya
The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.
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