Effect of heat treatment on the properties of erbium-doped silicon
С. И. ВласовTashkent State University, Tashkent, UzbekistanD. É. NazyrovTashkent State University, Tashkent, UzbekistanA. A. IminovTashkent State University, Tashkent, UzbekistanS. S. KhudaiberdievTashkent State University, Tashkent, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
The effect of thermal treatment on the electrical properties of n-Si doped with the rare-earth element erbium during growth was studied for the first time. Annealing of the erbium-doped samples in air at 900–1200°C for 1–2 h, followed by quenching or slow cooling, leads to inhibition of the high-temperature defects.
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