Maqola

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu AkasakiNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanHiroshi AmanoNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanYasuo KoideNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanKazumasa HiramatsuNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, JapanNobuhiko SawakiNagoya University, Department of Electronics, Furo-cho, Nagoya 464-01, Japan

1989en

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1016/0022-0248(89)90200-5

Iqtiboslar va manbalar

2 ta iqtibos0 ta foydalanilgan manba

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 &lt; x ≦ 0.4) films grown on sapphire substrate by MOVPE

Annotatsiya

Identifikatorlar

Iqtiboslar va manbalar

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE