Effective solar cells based on high-resistance monocrystalline silicon
М. Н. ТурсуновPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, UzbekistanA. Yu. LeĭdermanPhysicotechnical InstituteS. DadamukhamedovPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, UzbekistanMadinabonu YakubovaPhysicotechnical InstituteAbdurasul YarbekovPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, UzbekistanО. Ф. ТукфатуллинPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, Uzbekistan
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Results are presented of a study performed to develop the technology for fabricating the solar cell (SC) structures that are based on the high-resistance KDB-10 silicon wafers with surface layers that are additionally doped with boron. The primary barrier of the SC p-n junction structure is formed by diffusing phosphorus to a depth of 0.5 μm on the previously obtained diffusion layer that is doped with boron. The electrophysical parameters of the initial material are retained to large depths (to 300 μm), which ensures high effectiveness of the structure.
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