Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2
E. I. GoldmanInstitute of Radio Engineering and Electronics,, Russian Academy of Sciences,, Moscow , RussiaYu. V. GulyaevInstitute of Radio Engineering and Electronics,, Russian Academy of Sciences,, Moscow , RussiaA. G. ZhdanInstitute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, RussiaГ. В. ЧучеваInstitute of Radio Engineering and Electronics,, Russian Academy of Sciences,, Moscow , Russia
2001en
ABI
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